Self-aligned embedded source and drain contacts

An integrated circuit structure, comprising:

• a first source or drain region of a first device, a second source or drain region of a second device, and a third source or drain region of a third device;
• a first body of dielectric material laterally between the first source or drain region and the second source or drain region, and a second body of dielectric material laterally between the first source or drain region and the third source or drain region;
• a first gate stack and a second gate stack, wherein the first, second, and third source or drain regions are laterally between the first gate stack and the second gate stack;
• and
• a contact having (i) a first portion outside the first source or drain region and (ii) a second portion extending within the first source or drain region, wherein the first portion of the contact is adjacent to the first gate stack, the second gate stack, the first body of dielectric material, and the second body of dielectric material.

A method of forming a contact extending through a first source or a drain region, comprising:

• forming the first source or drain region of a first device, a second source or drain region of a second device, and a third source or drain region of a third device, wherein a first body of dielectric material is laterally between the first source or drain region and the second source or drain region, and a second body of dielectric material is laterally between the first source or drain region and the third source or drain region;
• forming a first gate stack and a second gate stack, such that the first, second, and third source or drain regions are laterally between the first gate stack and the second gate stack;
• forming a layer of dielectric material above a peripheral section of a top surface of the first source or drain region, wherein the layer of dielectric material is adjacent to the first body of dielectric material, the second body of dielectric material, the first gate stack, and the second gate stack, wherein the layer defines an opening above a central section of the top surface of the first source or drain region;
• removing a portion of the first source or drain region through the opening, so as to extend the opening within the first source or drain region;
• and
• forming the contact having (i) a lower section within the opening that is within the first source or drain region, and (ii) an upper section outside the opening that is within the first source or drain region.