Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devices
AssigneeWolfspeed, Inc.
InventorsMadankumar Sampath, Woongsun Kim, Naeem Islam, Sei-Hyung Ryu
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Abstract
A semiconductor device includes a semiconductor layer structure comprising a gate trench formed in an upper surface thereof, a gate finger in the gate trench, a supplemental dielectric layer on an upper surface of the gate finger and vertically overlaps the gate trench, and a gate connector on an upper surface of the supplemental dielectric layer and on an upper surface of the gate finger.
Claims30
A semiconductor device, comprising:
- a semiconductor layer structure comprising a gate trench formed in an upper surface thereof;
- a gate finger in the gate trench;
- a supplemental dielectric layer on an upper surface of the gate finger and vertically overlaps the gate trench;
- and
- a gate connector on an upper surface of the supplemental dielectric layer and on an upper surface of the gate finger.
4-8. (canceled)
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13-19. (canceled)
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A semiconductor device, comprising:
- a semiconductor layer structure comprising a gate trench therein;
- a gate finger in the gate trench;
- a gate dielectric layer in the gate trench between the semiconductor layer structure and the gate finger;
- a gate finger in the gate trench;
- a supplemental dielectric layer on an upper surface of the gate dielectric layer and on an upper surface of the gate finger;
- and
- an intermetal dielectric layer that vertically overlaps the supplemental dielectric layer.
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27-28. (canceled)
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The semiconductor device of claim 234, wherein the supplemental dielectric layer vertically overlaps the gate finger along substantially the entire length of the gate finger.
A semiconductor device, comprising:
- a semiconductor layer structure having a gate trench therein;
- a gate finger in the gate trench;
- a gate bus;
- a gate connector that electrically connects the gate finger to the gate bus;
- and
- a supplemental dielectric layer interposed in between an end portion of the gate finger and the gate connector.
37-41. (canceled)
45-83. (canceled)
Dependencies are inferred from the claim text.