Integrated circuit structure with backside power staple

An integrated circuit structure, comprising:

• a plurality of gate lines extending over a plurality of semiconductor fin structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a front-side metal routing layer extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts;
• a backside metal routing layer extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer;
• and
• a conductive feedthrough structure coupling the backside metal routing layer to the front-side metal routing layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate lines extending over a plurality of semiconductor nanowire stack channel structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a front-side metal routing layer extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts;
• a backside metal routing layer extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer;
• and
• a conductive feedthrough structure coupling the backside metal routing layer to the front-side metal routing layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate lines extending over a plurality of semiconductor fin structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a front-side metal routing layer extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts;
• a backside metal routing layer extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer;
• and
• a conductive feedthrough structure coupling the backside metal routing layer to the front-side metal routing layer.