Stacked single crystal transition-metal dichalcogenide using seeded growth

An apparatus comprising:

• a wafer;
• a seed material on the wafer, wherein a top of the seed material is at a first height above a surface of the wafer;
• a layer of single crystal material grown on a surface of the wafer and at least partially physically coupled with the seed material, wherein a top of the layer of single crystal material is at a second height above the surface of the wafer;
• and
• wherein the first height is greater than the second height.

A method comprising:

• providing a wafer;
• forming a seed on a region of the wafer;
• and
• growing a plurality of layers of single crystal material on a surface of the wafer from the formed seed, wherein the plurality of layers are in a stack, and wherein the single crystal material is a transition metal dichalcogenide (TMD).