Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channels

A die comprising:

• a substrate;
• and
• a transistor structure on the substrate, the transistor structure including:
• a first dielectric layer on a metal layer;
• a second dielectric layer above the first dielectric layer;
• and
• wherein a side of the first dielectric layer has a first area and a second area, wherein the first area and the second area are separate and distinct, and wherein the second area includes oxygen atoms.

An apparatus comprising:

• a wafer;
• and
• a transistor structure on the wafer, the transistor structure including:
• a first dielectric layer on a metal layer;
• a gap layer on the first dielectric layer;
• a second dielectric layer above the gap layer;
• and
• a seed material on the first dielectric layer, the seed material extending into the gap layer.

A method comprising:

• providing a transistor structure, the transistor structure including a plurality of substructures stacked on each other, each of the substructure including:
• a first dielectric layer on a metal layer;
• a gap layer on the first dielectric layer;
• and
• a second dielectric layer above the gap layer;
• and
• depositing a self-assembled monolayer (SAM) material on the transistor structure, wherein the SAM material is partially deposited on each of the first dielectric layers and extends into each of the gap layers.