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US 2023/0420499 A1Published application
Semiconductor device including isolation structure with nitridation layer
AssigneeNanya Technology Corporation
InventorYING-CHENG CHUANG
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first isolation structure, and a second isolation structure. The substrate has a first region and a second region. The first isolation structure is disposed within the first region of the substrate. The first isolation structure includes a first dielectric layer and a first nitridation layer disposed between the substrate and the first dielectric layer. The second isolation structure is disposed within the second region of the substrate.
Claims20
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first isolation structure disposed within the first region of the substrate, comprising:
- a first dielectric layer;
- and
- a first nitridation layer disposed between the substrate and the first dielectric layer;
- and
- a second isolation structure disposed within the second region of the substrate.
4 more elements
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first isolation structure disposed within the first region of the substrate;
- and
- a second isolation structure disposed within the second region of the substrate,
- wherein a first composition of the first isolation structure is different form a second composition of the second isolation structure.
2 more elements
Dependencies are inferred from the claim text.