Multi-capacitor module including a nested metal-insulator-metal (mim) structure

An integrated circuit (IC) device, comprising:

• an IC structure comprising:
• a lower IC element;
• an upper IC element formed in an upper metal layer;
• and
• a vertically-extending IC contact element formed in a dielectric region and conductively connected between the lower IC element and the upper IC element;
• and
• a multi-capacitor module, comprising:
• a nested metal-insulator-metal (MIM) structure formed in a tub opening in the dielectric region, the nested MIM capacitor structure including:
• a cup-shaped first electrode;
• a cup-shaped first insulator formed over the cup-shaped first electrode;
• a cup-shaped second electrode formed over the cup-shaped first insulator;
• a cup-shaped second insulator formed over the cup-shaped second electrode;
• a third electrode formed over the cup-shaped second insulator;
• wherein the cup-shaped first electrode, the cup-shaped second electrode, and the cup-shaped first insulator define a first capacitor;
• and
• wherein the cup-shaped second electrode, the third electrode, and the cup-shaped second insulator define a second capacitor;
• a third electrode connection element formed in the upper metal layer, wherein the third electrode connection element is electrically connected to the third electrode.

A method, comprising:

• forming a tub opening in a dielectric region;
• depositing a first conformal metal extending into the tub opening;
• depositing a first insulator layer extending into an opening defined by the first conformal metal;
• depositing a second conformal metal extending into an opening defined by the first insulator layer;
• depositing a second insulator layer extending into an opening defined by the second conformal metal;
• depositing a third electrode metal extending into an opening defined by the second insulator layer;
• and
• performing a planarization process defining a nested metal-insulator-metal (MIM) structure in the tub opening.