Capacitors of semiconductor device capable of operating in high frequency operation environment

An apparatus comprising a capacitor, wherein the capacitor comprising:

• a first electrode layer;
• a dielectric layer on the first electrode layer;
• and
• a second electrode layer on the dielectric layer,
• wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers,
• wherein each of the two sub-dielectric layers comprises a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series, and
• wherein the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer as a result of a conductivity difference between the first and second sub-dielectric layers.

An apparatus comprising:

• a first capacitor;
• and
• a second capacitor,
• wherein the first capacitor comprises a first dielectric layer and the second capacitor comprises a second dielectric layer,
• wherein thicknesses of the first and second dielectric layers are the same with each other,
• wherein each of the first and second dielectric layers comprises an unit dielectric layer, and
• wherein number of the unit dielectric layer of the first dielectric layer is different from that of the unit dielectric layer of the second dielectric layer.