Atomic layer deposition of high dielectric constant materials

A semiconductor processing method comprising:

• i) flowing a first precursor, wherein the first precursor comprises one or more of hafnium, lanthanum, niobium, strontium, tantalum, titanium, or zirconium;
• ii) forming a first portion of a metal oxide material on a first electrode;
• iii) flowing a second precursor;
• and
• iv) contacting the first portion of a metal oxide material with the second precursor, wherein the first precursor, the second precursor, or both further comprise oxygen, and wherein the contacting forms a metal oxide material, wherein the metal oxide material comprises one or more of hafnium oxide, lanthanum oxide, niobium oxide, strontium oxide, tantalum oxide, titanium oxide, or zirconium oxide.

A semiconductor structure comprising:

• a substrate;
• a first electrode overlying the substrate, wherein the first electrode comprises titanium nitride;
• one or more metal oxide materials overlying the first electrode, wherein the one or more metal oxide materials comprise one or more of hafnium oxide, lanthanum oxide, niobium oxide, strontium oxide, tantalum oxide, titanium oxide, or zirconium oxide;
• and
• a second electrode overlying the one or more metal oxide materials, wherein the second electrode comprises titanium nitride.