Image sensor and electronic apparatus including the image sensor

An image sensor comprising:

• a pixel array comprising a plurality of two-dimensionally arranged pixels,
• wherein each of the plurality of pixels comprises:
• a first meta-photodiode configured to selectively absorb light of a first wavelength band;
• a second meta-photodiode configured to selectively absorb light in a second wavelength band different from the first wavelength band;
• and
• a third meta-photodiode configured to selectively absorb light of a third wavelength band different from the first wavelength band and second wavelength band,
• wherein the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode are arranged in an area having a size less than a diffraction limit, and
• wherein a spacing between two meta-photodiodes adjacent in a first direction among the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode is about 150 nm or less, and the spacing is at least ½ of a sum of widths of the two adjacent meta-photodiodes.

An electronic apparatus comprising:

• a lens assembly configured to form an optical image of an object;
• an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal;
• and
• a processor configured to process a signal generated by the image sensor, wherein the image sensor comprises a pixel array including a plurality of two-dimensionally arranged pixels, and
• each of the plurality of pixels comprises:
• a first meta-photodiode configured to selectively absorb light of a first wavelength band;
• a second meta-photodiode configured to selectively absorb light of a second wavelength band different from the first wavelength band;
• and
• a third meta-photodiode configured to selectively absorb light of a third wavelength band different from the first wavelength band and second wavelength band,
• wherein, the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode are arranged in an area having a size less than a diffraction limit, and
• wherein the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode of one or more first pixels in a central portion of the pixel array, among the plurality of pixels, are arranged in a same form as the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode of one or more of second pixels in a periphery of the pixel array, among the plurality of pixels.