Imaging element
AssigneeSony Semiconductor Solutions Corporation
InventorsKeiichi NAKAZAWA, Yoshiaki KITANO, Hirofumi YAMASHITA, Minoru ISHIDA
Life of this patent
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Abstract
An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.
Claims21
1-20. (canceled)
An imaging element, comprising:
- a first section including a first semiconductor substrate, the first semiconductor substrate including a photoelectric converter and a floating diffusion;
- a second section including an insulating layer and a second semiconductor substrate, the second semiconductor substrate including a readout circuit for reading out a pixel signal from the floating diffusion, wherein the readout circuit comprises:
- a first transistor at least partially disposed in the second semiconductor substrate;
- and
- a second transistor at least partially disposed in the second semiconductor substrate;
- and
- a third section including a third semiconductor substrate, the third semiconductor substrate including a logic circuit for processing the pixel signal, wherein the second section is sandwiched between the first section and the third section;
- and
- a through electrode that penetrates through the insulating layer and electrically connects the floating diffusion to the readout circuit, wherein the through electrode is between the first transistor and the second transistor.
An electronic apparatus, comprising:
- a signal processing circuit;
- and
- an imaging element, comprising:
- a first section including a first semiconductor substrate, the first semiconductor substrate including a photoelectric converter and a floating diffusion;
- a second section including an insulating layer and a second semiconductor substrate, the second semiconductor substrate including a readout circuit for reading out a pixel signal from the floating diffusion, wherein the readout circuit comprises:
- a first transistor at least partially disposed in the second semiconductor substrate;
- and
- a second transistor at least partially disposed in the second semiconductor substrate;
- and
- a third section including a third semiconductor substrate, the third semiconductor substrate including a logic circuit for processing the pixel signal, wherein the second section is sandwiched between the first section and the third section;
- and
- a through electrode that penetrates through the insulating layer and electrically connects the floating diffusion to the readout circuit, wherein the through electrode is between the first transistor and the second transistor.
Dependencies are inferred from the claim text.