Solid-state imaging element

Abstract

To provide an imaging element capable of adjusting characteristics of a pixel transistor and miniaturizing the pixel transistor. A solid-state imaging element is a solid-state imaging element including a plurality of pixels provided on a surface of a substrate, each of the pixels including: a photoelectric conversion section; a first transistor having one end connected to the photoelectric conversion section; a second transistor provided between a first power supply and a first signal line; and a third transistor connected between the second transistor and the first signal line. The second transistor includes a first channel region extending in a direction substantially perpendicular to the surface of the substrate, and a first gate electrode provided on an upper surface and both side surfaces of the first channel region and connected to another end of the first transistor. The third transistor has a second channel region extending in a direction substantially perpendicular to the surface of the substrate, and a second gate electrode provided on an upper surface and both side surfaces of the second channel region. A first width between both side surfaces of the first channel region and a second width between both side surfaces of the second channel region are different from each other.

Dependencies are inferred from the claim text.