Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• a doped region disposed within the substrate;
• a gate electrode disposed over the doped region;
• a source region and a drain region disposed within the doped region;
• a shallow trench isolation (STI) structure disposed within the substrate and laterally surrounding the source region and the drain region;
• a first doped liner disposed along the STI structure, wherein the first doped liner separates the STI structure from the source region and the drain region;
• and
• a second doped liner disposed along the STI structure, wherein the second doped liner is separated from the first doped liner by the STI structure above a bottom surface of the STI structure.

A method of forming a semiconductor structure, comprising:

• forming a shallow trench isolation (STI) trench within a substrate;
• forming a first photoresist on an outer portion of the STI trench;
• implanting a dopant type into the STI trench forming a first doped liner on an inner portion of the STI trench;
• removing the first photoresist;
• forming a second photoresist in the STI trench covering the first doped liner;
• implanting the dopant type into the STI trench forming a second doped liner on the outer portion of the STI trench;
• wherein the second doped liner is formed with a different thickness than the first doped liner;
• removing the second photoresist;
• forming a STI structure in the STI trench over the first doped liner and the second doped liner;
• forming a doped region between inner sidewalls of the STI structure;
• forming a gate opening within the STI structure;
• and
• forming a gate electrode within the gate opening, wherein the gate electrode is formed with a first gate protrusion and a second gate protrusion separated by the doped region;
• and wherein the first gate protrusion and the second gate protrusion are connected by a gate body of the gate electrode formed above the doped region.