Dummy fin contact in vertically stacked transistors

A system comprising:

• a plurality of transistor components, wherein the plurality of transistor components comprises:
• a first bottom transistor, wherein the first bottom transistor comprises a channel, a gate, a source, and a drain;
• and
• a first contact on top of the first bottom transistor, wherein the first contact is proximately connected to the first bottom transistor, and wherein the first contact replaces a first top transistor.

A method of forming a vertically stacked transistor structure within a wafer, the method comprising:

• forming a first channel and a second channel;
• forming a first transistor comprising the first channel;
• forming a second transistor comprising the second channel, wherein the second transistor is on top of a first transistor;
• etching an opening through the second transistor, wherein the opening exposes the first transistor;
• and
• filling the opening with a conductive material, resulting in a contact, wherein the contact is proximately connected to the first transistor.