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US 2023/0420451 A1Published application
Semiconductor devices having on-chip gate resistors
AssigneeWolfspeed, Inc.
InventorsRahul R. Potera, Prasanna Obala Bhuvanesh, Shadi Sabri, Roberto M. Schupbach, Jianwen Shao
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Abstract
Power semiconductor devices comprise a gate pad, a gate bus, and a gate resistor that is electrically interposed between the gate pad and the gate bus and comprises a wide band-gap semiconductor material region.
Claims29
A semiconductor device comprising:
- a gate pad;
- a gate bus;
- and
- a gate resistor electrically interposed between the gate pad and the gate bus and comprising a wide band-gap semiconductor material region.
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A semiconductor device comprising:
- a semiconductor layer structure comprising an active area that comprises a plurality of junction field effect transistors (JFETs);
- a metal gate pad on the semiconductor layer structure;
- and
- a metal gate bus on the semiconductor layer structure and electrically connected to the plurality of JFETs,
- wherein the semiconductor layer structure further comprises a gate resistor that is electrically interposed between the metal gate pad and the metal gate bus.
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Dependencies are inferred from the claim text.