Power semiconductor device with forced carrier extraction and method of manufacture

A semiconductor device formed on a semiconductor substrate, the semiconductor device comprising:

• a semiconductor switch comprising a first conduction electrode disposed on a top side of the substrate and a drift region disposed between the first conduction electrode and a bottom side of the substrate, the semiconductor switch configured to employ conductivity modulation in the drift region;
• a deep trench disposed in the substrate and extending into the drift region;
• an extraction plug providing a low resistance electrical path to a lower area of the drift region, the lower area of the drift region being disposed adjacent to the bottom of the deep trench;
• an insulator disposed within the deep trench and configured to isolate the extraction plug from a portion of the semiconductor switch disposed above the lower area of the drift region;
• an extraction device electrically coupled to the extraction plug, and configured to be turned on when the power semiconductor switch is turned off, to be turned off when the power semiconductor switch is turned on, and to remove charge carriers from the drift region through the extraction plug when turned on.