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US 2023/0420447 A1Published application
Fin-based and bipolar electrostatic discharge devices
AssigneeGlobalFoundries U.S. Inc.
InventorsRobert J. GAUTHIER, JR., Meng MIAO, Alain F. LOISEAU, Souvick MITRA, You LI, Wei LIANG
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.
Claims18
A structure comprising:
- a collector fin structure of a first dopant type,
- an emitter fin structure of the first dopant type,
- a base fin structure of a second dopant type, and
- lateral ballasting fin structures of the first dopant type adjacent to the collector fin structure.
1 more element
A structure comprising:
- a bipolar transistor comprising a collector region, an emitter region and a base region;
- and
- shallow trench isolation regions which separate the emitter region from the collector region and the emitter region from the base region, wherein a width of one of the shallow trench isolation regions separating the emitter region from the collector region is greater than a distance between a collector fin structure and an adjacent ballast resistance fin.
A structure comprising:
- a collector fin structure;
- an emitter fin structure;
- a base fin structure;
- lateral ballasting fin structures adjacent to the collector fin structure;
- shallow trench isolation regions which separate the emitter fin structure from the collector fin structure and the emitter fin structure from the base fin structure, wherein a width of one of the shallow trench isolation regions separating the emitter fin structure from the collector fin structure is greater than a distance between the collector fin structure and an adjacent ballast resistance fin structure.
2 more elements
Dependencies are inferred from the claim text.