Integrated circuit devices with diodes integrated in subfins

An integrated circuit (IC) device, comprising:

• a subfin structure including a first doped well and a second doped well adjacent to one another along a first axis;
• a first structure extending along a second axis away from the first doped well;
• and
• a second structure extending along the second axis away from the second doped well, wherein:
• one of the first doped well and the second doped well includes a semiconductor material with P-type dopants,
• another one of the first doped well and the second doped well includes a semiconductor material with N-type dopants,
• a first recess extends along the second axis into the first doped well to a first distance,
• a second recess extends along the second axis into the second doped well to a second distance,
• a third recess extends along the second axis into at least one of the first doped well or the second doped well to a third distance shorter than the first distance and the second distance,
• a portion of the first structure is within the first recess, and
• a portion of the second structure is within the second recess.

A method for fabricating a transistor arrangement, the method comprising:

• forming a fin extending away from a substrate, the fin including a subfin, wherein the subfin includes a plurality of alternating first and second doped regions adjacent to one another along a longitudinal axis of the fin, the first and second doped regions being regions of one or more semiconductor materials with different types of dopants;
• forming a stack of nanoribbons from a portion of the fin above the first and second doped regions;
• providing a plurality of first structures spaced apart from each other along the longitudinal axis, wherein an individual first structure extends vertically away from one of the first and second doped regions and includes an electrically conductive material at least partially wrapping around the nanoribbons of the stack;
• and
• providing a plurality of second structures spaced apart from each other by at least one of the first structures, wherein an individual second structure extends vertically away from one of the first and second doped regions and includes a semiconductor material extending through each of the nanoribbons of the stack,
• wherein a distance between a nearest-neighbor pair of two of the first structures with one of the second structures is greater than a distance between a nearest-neighbor pair of two of the first structures with none of the second structures.