Semiconductor device
AssigneeRohm Co., Ltd.
InventorsYuji ISHIMATSU, Ryuichi FURUTANI
Life of this patent
Estimating the term…
Abstract
A semiconductor device A1 includes a substrate 3, a conductive section 5 formed on the substrate 3 and including a conductive material, a lead 1A located on the substrate 3, a semiconductor chip 4A located on the lead 1A, a control chip 4G located on the substrate 3 and electrically connected to the conductive section 5 and the semiconductor chip 4A for controlling an operation of the semiconductor chip 4A, and a resin 7 covering the semiconductor chip 4A, the control chip 4G, at least a part of the substrate 3 and a part of the lead 1A. This configuration contributes to achieving a higher level of integration of the semiconductor device.
Claims17
1-36. (canceled)
A semiconductor device comprising:
- a substrate that is insulating and includes a substrate main surface and a substrate back surface;
- a plurality of wiring patterns formed on a substrate main surface of the substrate;
- a plurality of semiconductor chips that include a first electrode and a control electrode formed on a chip main surface side and a second electrode formed on a chip back surface and perform switching operation between the first electrode and the second electrode in response to a signal input to the control electrode;
- a control chip that generates a signal to be input to the control electrode;
- a plurality of first leads to be electrically connected to the first electrode or the second electrode;
- a plurality of second leads to be electrically connected to the control chip;
- and
- an encapsulating resin covering at least a part of the plurality of first leads and the plurality of second leads, the substrate, the plurality of wiring patterns, and the plurality of semiconductor chips,
- wherein at least a part of the plurality of wiring patterns is arranged in a middle of a path connecting the control electrode and the control chip.
Dependencies are inferred from the claim text.