Semiconductor package
AssigneeSamsung Electronics Co., Ltd.
InventorsGWANGJAE JEON, DONGKYU KIM, JUNG-HO PARK, YEONHO JANG
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor package comprising a redistribution substrate, and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern, a lower dielectric layer that covers a sidewall of the under-bump pattern, and a first redistribution pattern on the lower dielectric layer. The first redistribution pattern includes a first line part. A width at a top surface of the under-bump pattern is greater than a width at a bottom surface of the under-bump pattern. A thickness of the under-bump pattern is greater than a thickness of the first line part.
Claims21
-21. (canceled)
A method of manufacturing a semiconductor package comprising
- forming a redistribution substrate;
- and
- placing a semiconductor chip on the redistribution substrate,
- wherein forming a redistribution substrate includes:
- forming a first seed layer on a carrier substrate;
- forming a first dielectric pattern including a first opening on the first seed layer;
- forming an under-bump pattern within the first opening;
- forming a second dielectric pattern including a second opening on the first dielectric pattern and the under-bump pattern, the second opening exposing a top surface of the under-bump pattern;
- sequentially forming a second seed layer and a conductive layer that fill the second opening and extend to the top surface of the second dielectric pattern;
- and
- forming a redistribution pattern by patterning the second seed layer and the conductive layer.
A method of manufacturing a semiconductor package comprising:
- forming a redistribution substrate;
- and
- placing a semiconductor chip on the redistribution substrate,
- wherein forming a redistribution substrate includes:
- forming a first seed layer on a carrier substrate;
- forming a first dielectric pattern including a first opening on the first seed layer;
- forming an under-bump pattern within the first opening;
- forming a second dielectric pattern including a second opening on the first dielectric pattern and the under-bump pattern, wherein the second opening exposes a top surface of the under-bump pattern;
- and
- forming a redistribution pattern that fills the second opening and extends onto a top surface of the second dielectric pattern.
Dependencies are inferred from the claim text.