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US 2023/0420388 A1Published application
Semiconductor structures including auxetic microstructures and method of forming the same
AssigneeSanDisk Technologies LLC
InventorYushi YOKOMIZO
Life of this patent
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Abstract
A semiconductor structure includes a semiconductor device substrate, and an auxetic microstructure containing an auxetic matrix having a negative Poission's ratio.
Claims20
A semiconductor structure, comprising:
- a semiconductor device substrate;
- and
- an auxetic microstructure comprising an auxetic matrix having a negative Poission's ratio.
The semiconductor structure 3, wherein the auxetic matrix comprises a first material and the fill material portions comprise a second material different from the first material.
The semiconductor structure 3, wherein the semiconductor device substrate comprises a semiconductor substrate containing the auxetic matrix.
A method, comprising:
- providing a semiconductor device substrate;
- and
- forming an auxetic microstructure comprising an auxetic matrix having a negative Poission's ratio in or over the semiconductor device substrate.
Dependencies are inferred from the claim text.