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US 2023/0420375 A1Published application
Inorganic-based embedded-die layers for modular semiconductive devices
AssigneeIntel Corporation
InventorsSrinivas V. PIETAMBARAM, Tarek IBRAHIM, Kristof DARMAWIKARTA, Rahul N. MANEPALLI, Debendra MALLIK, Robert L. SANKMAN
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Abstract
A glass substrate houses an embedded multi-die interconnect bridge that is part of a semiconductor device package. Through-glass vias communicate to a surface for mounting on a semiconductor package substrate.
Claims20
A semiconductive device, comprising:
- an interconnect bridge in an opening in an inorganic substrate, wherein the inorganic substrate includes a die side and a land side;
- a dielectric film over the inorganic substrate, over the interconnect bridge, and in the opening in the inorganic substrate;
- a plurality of through-substrate vias that extend from the die side to the land side;
- a first semiconductive device coupled to the interconnect bridge and to a first through-substrate via of the plurality of through-substrate vias, wherein the first semiconductive device includes substrate bond pads that couple to the first through-substrate via, and interconnect bridge bond pads that couple to the interconnect bridge, and wherein the first semiconductive device has a plurality of through-silicon-vias (TSVs) therein;
- a subsequent semiconductive device coupled to the interconnect bridge and to a second through-substrate via of the plurality of through-substrate vias, wherein the subsequent semiconductive device includes substrate bond pads that couple to the second through-substrate via, and interconnect bridge bond pads that couple to the interconnect bridge;
- and
- at least one first chiplet coupled to the first semiconductive device.
4 more elements
A method of fabricating a semiconductive device, the method comprising:
- embedding an interconnect bridge in an opening in an inorganic substrate, wherein the inorganic substrate includes a die side and a land side;
- forming a dielectric film over the inorganic substrate, over the interconnect bridge, and in the opening in the inorganic substrate;
- forming a plurality of through-substrate vias that extend from the die side to the land side;
- coupling a first semiconductive device to the interconnect bridge and to a first through-substrate via of the plurality of through-substrate vias, wherein the first semiconductive device includes substrate bond pads that couple to the first through-substrate via, and interconnect bridge bond pads that couple to the interconnect bridge, and wherein the first semiconductive device has a plurality of through-silicon-vias (TSVs) therein;
- coupling a subsequent semiconductive device to the interconnect bridge and to a second through-substrate via of the plurality of through-substrate vias, wherein the subsequent semiconductive device includes substrate bond pads that couple to the second through-substrate via, and interconnect bridge bond pads that couple to the interconnect bridge;
- and
- coupling at least one first chiplet to the first semiconductive device.
4 more elements
Dependencies are inferred from the claim text.