Integrated circuit structure with recessed self-aligned deep boundary via

An integrated circuit structure, comprising:

• a plurality of gate lines extending over a plurality of semiconductor fin structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a backside metal routing layer extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts;
• and
• a conductive structure coupling the backside metal routing layer to one of the one or more of the plurality of trench contacts, the conductive structure comprising a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate lines extending over a plurality of semiconductor nanowire stack channel structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a backside metal routing layer extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts;
• and
• a conductive structure coupling the backside metal routing layer to one of the one or more of the plurality of trench contacts, the conductive structure comprising a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate lines extending over a plurality of semiconductor fin structures;
• a plurality of trench contacts extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines;
• a backside metal routing layer extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts;
• and
• a conductive structure coupling the backside metal routing layer to one of the one or more of the plurality of trench contacts, the conductive structure comprising a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.