Integrated circuit packages with silver and silicon nitride multi-layer

A method of manufacturing an integrated circuit (IC) package support, comprising:

• forming a conductive line;
• forming a first layer of material on a top surface and on side surfaces of the conductive line, wherein the first layer of material includes silver;
• forming a second layer of material on the first layer of material, wherein the second layer of material includes silicon or aluminum, and one or more of nitrogen and oxygen;
• and
• forming a layer of dielectric material on the second layer of material, wherein the conductive line is embedded in the layer of dielectric material.