Semiconductor package and method

A semiconductor package comprising:

• a redistribution structure comprising:
• a first insulating layer;
• a first redistribution pattern in the first insulating layer;
• a second insulating layer over the first redistribution pattern;
• and
• a second redistribution pattern in the second insulating layer, wherein the second redistribution pattern comprises a plurality of contact pads comprising:
• signal pads;
• power pads;
• ground pads;
• and
• dummy pads;
• wherein first portions of the first redistribution pattern are connected to the dummy pads by vias extending through the second insulating layer;
• a heat dissipation system comprising:
• the first portions of the first redistribution pattern;
• the dummy pads;
• and
• the vias, wherein the heat dissipation system is electrically isolated from circuits of the semiconductor package;
• and
• a third insulating layer over the second redistribution pattern.

A method of manufacturing a semiconductor package, the method comprising:

• depositing a first dielectric layer over a carrier substrate;
• forming a first redistribution pattern on a first side of the first dielectric layer, wherein first portions of the first redistribution pattern are electrically isolated from remaining portions of the first redistribution pattern;
• depositing a second dielectric layer on the first redistribution pattern and the first dielectric layer;
• forming openings in the second dielectric layer to partially expose the first portions of the first redistribution pattern;
• forming a second redistribution pattern on the second dielectric layer, wherein the second redistribution pattern fills in the openings in the second dielectric layer and forms vias, wherein first portions of the second redistribution pattern are electrically isolated from remaining portions of the second redistribution pattern, and wherein the vias connect the first portions of the first redistribution pattern to the first portions of the second redistribution pattern;
• and
• depositing a third dielectric layer on the second redistribution pattern and the second dielectric layer.