Semiconductor Packages and Methods of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSey-Ping Sun, Chen-Hua Yu
Life of this patent
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Abstract
A method includes bonding a first semiconductor die to a semiconductor substrate; bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap; filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region; and depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.
Claims20
A method comprising:
- bonding a first semiconductor die to a semiconductor substrate;
- bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap;
- filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region;
- and
- depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.
A method comprising:
- bonding a plurality of first semiconductor devices to a first package region of a substrate;
- bonding a plurality of second semiconductor devices to a second package region of the substrate, wherein a scribe region separates the first package region from the second package region;
- depositing a metal fill material over the substrate, the plurality of first semiconductor devices, and the plurality of second semiconductor devices, wherein the metal fill material surrounds each of the first semiconductor devices and each of the second semiconductor devices;
- and
- depositing a first dielectric material in the scribe region, wherein the first dielectric material separates a first semiconductor device from a second semiconductor device.
A package comprising:
- a plurality of semiconductor devices directly bonded to an interposer, wherein the semiconductor devices of the plurality of semiconductor devices are laterally separated from each other by a metallic material;
- a dielectric material collectively encircling the plurality of semiconductor devices;
- and
- a support substrate covering the plurality of semiconductor devices, wherein sidewalls of the support substrate, sidewalls of the dielectric material, and sidewalls of the interposer are coplanar.
Dependencies are inferred from the claim text.