Semiconductor device and method forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsHsiu-Mei YU, Guang-Yuan JIANG, Cheng-Yi HSIEH, Wei-Chan CHANG, Chang-Sheng LIN
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Abstract
A semiconductor device includes: a substrate; a seed layer disposed on the substrate; a compound semiconductor stack layer disposed on the seed layer; and a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer. The semiconductor device further includes a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer. The conductive layer electrically connects the seed layer and the source metal layer.
Claims21
A semiconductor device, comprising:
- a substrate;
- a seed layer disposed on the substrate;
- a compound semiconductor stack layer disposed on the seed layer;
- a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer;
- and
- a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer, wherein the conductive layer electrically connects the seed layer and the source metal layer.
A method forming a semiconductor device, comprising:
- providing a substrate;
- forming a seed layer on the substrate;
- forming a compound semiconductor stack layer on the seed layer;
- forming a source metal layer and a drain metal layer on the compound semiconductor stack layer;
- performing a dicing process to form a dicing opening through the compound semiconductor stack layer and the seed layer, and extending into at least a portion of the substrate;
- conformally depositing a conductive layer on a bottom and sidewalls of the dicing opening, and covering the source metal layer and the drain metal layer;
- and
- removing a portion of the conductive layer located between the source metal layer and the drain metal layer.
Dependencies are inferred from the claim text.