Semiconductor device and manufacturing method for semiconductor device

A method for manufacturing a semiconductor device that includes a cell region including cells and a peripheral region arranged at an outer side of the cell region and surrounding the cell region, the method comprising:

• forming a first semiconductor layer of a first conductive type in the peripheral region;
• partially forming a second semiconductor region of a second conductive type on the first semiconductor layer;
• forming an insulation film covering a surface of the first semiconductor layer and a surface of the second semiconductor region;
• forming a barrier layer on a surface of the insulation film, the barrier layer having a smaller diffusion coefficient than the insulation film;
• forming an opening extending through the insulation film and the barrier layer to partially expose the second semiconductor region;
• forming an electrode including a first part arranged in the opening and a second part including a projection projecting sideward from the first part and overlapping with the insulation film and the barrier layer;
• and
• forming a passivation film that covers the barrier layer and the electrode.

A method for manufacturing a semiconductor device that includes a cell region including cells and a peripheral region arranged at an outer side of the cell region and surrounding the cell region, the method comprising:

• forming a first semiconductor layer of a first conductive type in the peripheral region;
• partially forming a second semiconductor region of a second conductive type on the first semiconductor layer;
• forming a first insulation film covering a surface of the first semiconductor layer and a surface of the second semiconductor region;
• forming a barrier layer on a surface of the first insulation film, the barrier layer having a smaller diffusion coefficient than the first insulation film;
• forming a second insulation film that covers a surface of the barrier layer;
• forming an opening extending through the first insulation film, the second insulation film, and the barrier layer to partially expose the second semiconductor region;
• forming an electrode including a first part arranged in the opening and a second part including a projection projecting sideward from the first part and overlapping with the second insulation film and the barrier layer;
• and
• forming a passivation film that covers the second insulation film and the electrode.