Deposition method for fabricating semiconductor device structure

A deposition method for fabricating a semiconductor device structure, comprising:

• executing a first deposition recipe on a first wafer to turn a first wafer state of the first wafer to a second wafer state;
• collecting the second wafer state of the first wafer to generate a first set of data;
• and
• analyzing the first set of data and update the first deposition recipe to a second deposition recipe when the first set of data is not within a predetermined range;
• wherein the second deposition recipe is generated taking into consideration at least one of a deposition rate of the second wafer, a rate of rotation of the second wafer, a tilt angle of the second wafer, an etching recipe of the first wafer, and an implanting recipe of the first wafer;
• and
• wherein the second deposition recipe is configured to be applied on a second wafer to be processed after the first wafer.