Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• disposing a first insulating film and a first conductive film in this order at a second surface of a semiconductor substrate having a first surface and the second surface;
• forming a first through hole penetrating from the first surface to the second surface of the semiconductor substrate to expose the first insulating film disposed at the second surface from the first through hole;
• forming a second insulating film at the first surface of the semiconductor substrate and a side surface of the first through hole;
• disposing a resist at a surface of the second insulating film from the first surface of the semiconductor substrate to an end portion of the side surface of the first through hole on a first surface side of the semiconductor substrate;
• wet-etching the first insulating film and the second insulating film by using the resist as a mask and forming a second through hole continuous with the first through hole in the first insulating film;
• covering the first surface of the semiconductor substrate, the side surface of the first through hole, a side surface of the second through hole, and a surface of the first conductive film exposed from the second through hole with an organic insulating film;
• forming an opening for exposing the first conductive film in the organic insulating film;
• and
• forming a second conductive film at a surface of the organic insulating film and the surface of the first conductive film exposed from the opening formed in the organic insulating film.