Method of manufacturing semiconductor structure and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsZhaopei CUI, Ying SONG
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Abstract
A method of manufacturing a semiconductor structure and a semiconductor structure are disclosed. The method of manufacturing a semiconductor structure includes: providing a substrate; forming a multilayer film stack on the substrate; forming a supporter at a top of the multilayer film stack; and etching the multilayer film stack to form a plurality of gate structures arranged at intervals along a first direction, where the supporter penetrates a top of each of the plurality of gate structures and extends along the first direction.
Claims18
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a multilayer film stack on the substrate;
- forming a supporter at a top of the multilayer film stack;
- and
- etching the multilayer film stack to form a plurality of gate structures arranged at intervals along a first direction, the supporter penetrating a top of each of the plurality of gate structures and extending along the first direction.
A semiconductor structure, wherein the semiconductor structure comprises:
- a substrate;
- a plurality of gate structures, located on the substrate and arranged at intervals along a first direction;
- and
- a supporter, penetrating a top of each of the plurality of gate structures and extending along the first direction.
Dependencies are inferred from the claim text.