Pattern forming method, template manufacturing method, and semiconductor device manufacturing method

A template manufacturing method comprising:

• forming a first layer over a substrate;
• forming a first pattern along a surface of the first layer opposite to the substrate, the first pattern including an inclined portion with a recessed portion;
• and
• forming a second pattern on the substrate by performing, with the first layer as a mask, a first etching process to remove a part of the substrate.

A semiconductor device manufacturing method comprising:

• providing a stacked body including a plurality of third layers and a plurality of insulating layers alternately stacked on a semiconductor substrate;
• providing a template through (i) forming a first pattern including an inclined portion and a recessed portion along a surface of a first layer provided on a substrate;
• and (ii) forming a second pattern on the substrate by performing a first etching process to remove a part of the substrate using the first layer as a mask;
• applying an insulator to cover the stacked body;
• using the template to imprint a first hole exposing one of the plurality of third layers and a second hole different in depth from the first hole and exposing another one of the plurality of third layers in the insulator;
• and
• forming a conductor in the first hole and the second hole.