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US 2023/0420271 A1Published application
Semiconductor power module and method for manufacturing a semiconductor power module for a semiconductor device and semiconductor device
AssigneeHitachi Energy Switzerland AG
InventorsHarald BEYER, David GUILLON, Roman EHRBAR
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Abstract
A semiconductor power module (10) and method of manufacture thereof comprises a substrate layer (11) forming a baseplate and a molded body coupled thereto. The molded body has at least one fiber and/or mesh structure forming a local reinforcement portion embedded in the molded body. The semiconductor power module may be part of a semiconductor device having electronics coupled with the semiconductor power module (10).
Claims16
A semiconductor power module, comprising:
- a substrate layer, and
- a molded body coupled to the substrate layer having at least one of:
- at least one fiber structure and
- at least one mesh structure forming a local reinforcement portion embedded in the molded body.
1 more element
A method for manufacturing a semiconductor power module, comprising:
- providing a substrate layer,
- providing at least one of at least one fiber structure and at least one mesh structure,
- providing a substance, and
- molding the provided substance onto the substrate layer such that a molded body is formed having the at least one of at least one fiber structure and at least one mesh structure forming a local reinforcement portion embedded in the molded body.
1 more element
Dependencies are inferred from the claim text.