Method of manufacturing semiconductor device having island structure
AssigneeNanya Technology Corporation
InventorCHEN-CHENG CHANG
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes: providing a substrate comprising an array region and a peripheral region, wherein the array region and the peripheral region define a stepped structure, performing a deposition process to form a passivation layer over the array region and the peripheral region; performing an etching process to remove a portion of the passivation layer over the array region; and performing a chemical mechanical polishing process so that the passivation layer has a substantially continuous surface over the array region and the peripheral region.
Claims11
A method for manufacturing a semiconductor device, comprising:
- providing a substrate comprising an array region and a peripheral region, wherein the array region and the peripheral region define a stepped structure;
- performing a deposition process to form a passivation layer over the array region and the peripheral region;
- performing an etching process to remove a portion of the passivation layer over the array region;
- and
- performing a chemical mechanical polishing process so that the passivation layer has a substantially continuous surface over the array region and the peripheral region.
Dependencies are inferred from the claim text.