Semiconductor Structure and Method for Forming the Same
AssigneeHua Hong Semiconductor (Wuxi) Limited
InventorsTongqing CHEN, Yang YUAN, Zuohua ZHU
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Abstract
The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The method includes: providing a substrate; forming a mask layer on the substrate, wherein the mask layer exposes a part of a surface of the substrate; etching the substrate by a plasma etching process using the mask layer as a mask to form a plurality of trenches and an active region between the plurality of trenches; and forming an insulating layer in the plurality of trenches. The method according to some embodiments of the present disclosure can protect a corner region of the active region and improve a size stability of the active region.
Claims18
A semiconductor structure, comprising:
- a substrate comprising a plurality of trenches and an active region between the plurality of trenches, and a corner region is formed between a top and a side wall of the active region;
- a first protective layer disposed on a surface of the corner region exposed by the plurality of trenches;
- and
- an insulating layer disposed in the plurality of trenches.
A method for forming a semiconductor structure, comprising:
- providing a substrate;
- forming a mask layer on the substrate, wherein the mask layer exposes a part of a surface of the substrate;
- etching the substrate by a plasma etching process using the mask layer as a mask to form a plurality of trenches and an active region between the plurality of trenches;
- and
- forming an insulating layer in the plurality of trenches;
- wherein the plasma etching process comprises:
- performing a first etching process, wherein a plurality of initial trenches are formed in the substrate, an initial active region is formed between the plurality of initial trenches, and a corner region is formed between a top and a side wall of the active region;
- performing a second etching process after the first etching process, wherein a reaction gas is introduced into an etching cavity to form a first protective layer on a surface of the corner region exposed by the plurality of initial trenches;
- and
- performing a third etching process after the second etching process, wherein the substrate at a bottom of the plurality of initial trenches is etched to form the active region and the plurality of trenches.
Dependencies are inferred from the claim text.