Back to results
US 2023/0420256 A1Published application
Method of forming a photoresist underlayer and structure including same
AssigneeASM IP Holding B.V.
InventorsIvan Zyulkov, David Kurt de Roest, Yoann Tomczak, Michael Eugene Givens, Perttu Sippola, Tatiana Ivanova, Zecheng Liu, Bokheon Kim, Daniele Piumi
Life of this patent
Estimating the term…
Abstract
Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.
Claims16
A method of forming a structure comprising a photoresist underlayer, the method comprising the steps of:
- providing a substrate;
- forming a photoresist underlayer overlying a surface of the substrate using a cyclic deposition process;
- wherein the photoresist underlayer comprises one or more of an oxide, a nitride, and an oxynitride of a metal;
- wherein the metal comprises one or more transition metals.
1 more element
Dependencies are inferred from the claim text.