Film forming method
AssigneeTokyo Electron Limited
InventorsShota CHIDA, Yosuke WATANABE, Keisuke SUZUKI
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Abstract
A film forming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.
Claims15
A film foaming method of forming a metal-containing film on a substrate, the film forming method comprising:
- a) supplying a metal-containing gas to the substrate;
- b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas;
- and
- c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.
A film foaming method of forming a stacked film on a substrate, the stacked film including a silicon-containing film and a metal-containing film, the film forming method comprising:
- a) forming the silicon-containing film;
- and
- b) forming the metal-containing film,
- wherein the b) includes
- b1) supplying a metal-containing gas to the substrate,
- b2) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas, and
- b3) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.
Dependencies are inferred from the claim text.