Transparent and high-k thin film prepared by pulsed laser deposition

Abstract

A thin film (Ga 0.5%, Cu 8%) co-doped ZnO with high dielectric constant and high optical transmittance in the visible light range is formed via a pulse laser deposition method. The steps of the method involve installing a sapphire based substrate mounted on a sample holder into a pulse laser deposition chamber; and installing a ZnO ceramic target containing designed Ga and Cu concentrations in the chamber. Then the chamber is evacuated until the pressure achieves 5e-4 Pa., at which point the substrate is heated to about 600 degrees C. Next oxygen gas is introduced into the chamber and adjusted to a pressure of about 5 Pa. The rotation speed of the substrate holder and target holder are adjusted to about 10 r/min. Finally, the laser beam is applied to the target to ablate it sufficiently to generate a plasma of ionized atoms that are deposited on the substrate to form the film with the same composition same as the target.

Dependencies are inferred from the claim text.