Method of manufacturing silicon nitrogeneous film
AssigneeMerck Patent GmbH
InventorsAtsuhiko SATO, Ralph R. DAMMEL, Takashi FUJIWARA, Mansour MOINPOUR
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Abstract
A method is disclosed for the preparation of a silicon nitrogeneous film. Polysilazane film is exposed to an electron beam irradiation and subsequently to at least one process selected from the group consisting of a vacuum ultra-violet light irradiation and a plasma processing. The treated film is heated under a non-oxidizing atmosphere to manufacture a silicon nitrogeneous film. The silicon nitrogeneous film is able to be formed at low process temperature. Further, the silicon nitrogeneous film has a high refractive index and low oxygen content.
Claims12
-11. (canceled)
A method for manufacturing a silicon nitrogenous film comprising:
- (i) applying a silicon nitrogenous film forming composition comprising a polysilazane and a solvent above a substrate to form a coating film,
- (ii) irradiating an electron beam onto the coating film under a non-oxidizing atmosphere,
- (iii) at least one process selected from the group consisting of
- (a) irradiating a vacuum ultra-violet light onto the electron beam irradiated coating film under a non-oxidizing atmosphere and
- (b) plasma processing onto the electron beam irradiated coating film, and
- (iv) heating the treated-coating film of step (iii) under a non-oxidizing atmosphere.
Dependencies are inferred from the claim text.