Integrated method and tool for high quality selective silicon nitride deposition
AssigneeApplied Materials, Inc.
InventorsTomohiko Kitajima, Ning Li, Chang Seok Kang, Naomi Yoshida
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Abstract
Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.
Claims14
A processing method to form a logic or memory device, the processing method comprising:
- pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;
- exposing the top surface of the film stack to a growth inhibitor;
- selectively depositing a silicon-containing dielectric layer in a region of the film stack;
- and
- densifying the silicon-containing dielectric layer,
- wherein the processing method is performed in a processing tool without breaking vacuum.
A processing method to form a logic or memory device, the processing method comprising:
- pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;
- selectively depositing a silicon-containing dielectric layer in a region of the film stack;
- and
- densifying the silicon-containing dielectric layer,
- wherein the processing method is performed in a processing tool without breaking vacuum.
A processing method to form a logic or memory device, the processing method comprising:
- pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;
- exposing the top surface of the film stack to a growth inhibitor;
- selectively depositing a silicon-containing dielectric layer in a region of the film stack;
- densifying the silicon-containing dielectric layer;
- and
- optionally, repeating one or more of pre-cleaning the top surface of the film stack, exposing the top surface of the film stack to a growth inhibitor, selectively depositing a silicon-containing dielectric layer, and densifying the silicon-containing dielectric layer,
- wherein the processing method is performed in a processing tool without breaking vacuum.
Dependencies are inferred from the claim text.