Method of processing wafer
AssigneeDisco Corporation
InventorYu ZHAO
Life of this patent
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Abstract
A wafer has a substrate and a functional layer disposed on the substrate along a plurality of projected dicing lines. A method of processing the wafer includes applying a laser beam to the wafer along the projected dicing lines to remove portions of the functional layer, forming processed grooves in the functional layer through which the substrate is exposed, removing damaged regions produced in an interface between the substrate and the functional layer by the laser beam, and forming recesses extending outwardly from side surfaces of the processed grooves, a recess exposing step of removing portions of the functional layer that overhang the recesses, thereby exposing the recesses, and processing the substrate along the projected dicing line after the recess exposing step has been carried out.
Claims4
A method of processing a wafer including a substrate and a functional layer disposed on the substrate along a plurality of projected dicing lines established on the wafer, the method comprising:
- a processed groove forming step of applying a laser beam to the wafer along the projected dicing lines to remove portions of the functional layer, and forming processed grooves in the functional layer through which the substrate is exposed;
- a damaged region removing step of removing damaged regions produced in an interface between the substrate and the functional layer in the processed groove forming step, and forming recesses extending outwardly from side surfaces of the processed grooves;
- a recess exposing step of removing portions of the functional layer that overhang the recesses, thereby exposing the recesses;
- and
- a substrate processing step of processing the substrate along the projected dicing line after the recess exposing step has been carried out.
Dependencies are inferred from the claim text.