Plasma-Enhanced Chemical Vapor Deposition for Structurally-Complex Substrates
OwnerAustin Loinventor
Life of this patent
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Abstract
A substrate includes a first outer surface, a second outer surface opposite the first outer surface, and a region having a volume extending from the first outer surface to the second outer surface. At least a portion of the volume of this region defines a cavity of an interstitial site where the interstitial site is defined by a wall having a surface and the surface includes a plasma-formed deposition layer.
Claims25
A method of depositing a material on a substrate having a first outer surface, a second outer surface opposite the first outer surface, and a thickness extending between the first outer surface and the second outer surface, wherein the substrate includes a charge-neutral ion deposition state within a volume of the thickness, the method comprising:
- doping the substrate with plasma to generate a charged ion deposition state for the substrate, the charged ion deposition state having a non-zero electric field within the volume of the thickness;
- and
- depositing ions on the substrate doped with plasma at one or more interstitial sites within the volume of the thickness.
A substrate comprising:
- a first outer surface;
- a second outer surface opposite the first outer surface;
- and
- a region having a volume extending from the first outer surface to the second outer surface, wherein at least a portion of the volume defines a cavity of an interstitial site, the interstitial site defined by a wall having a surface, the surface including a plasma-formed deposition layer.
A system comprising:
- a chamber having a source gas input port and an exhaust gas outlet port;
- an electrode electrically coupled to a voltage source;
- and
- a plasma-doped substrate facing the electrode,
- wherein the plasma-doped substrate includes:
- a first outer surface;
- a second outer surface opposite the first outer surface;
- a region having a volume extending from the first outer surface to the second outer surface, wherein at least a portion of the volume defines a cavity of an interstitial site;
- and
- a plasma disposed within the cavity.
A system comprising:
- a plurality of plasma cells, each plasma cell including:
- a plasma formed from a chemically non-reactive species of gas;
- a first wall;
- a second wall oppositely facing the first wall;
- a third wall extending between the first wall and the second wall, the third wall having a first voltage equal to a potential of the plasma;
- and
- a fourth wall oppositely facing the third wall and extending between the first wall and the second wall, the fourth wall having a second voltage less than the potential of the plasma,
- wherein the first wall and the second wall form a first pair of opposite facing walls that are electrically insulated and grounded,
- wherein the plasma occupies a volume of the respective plasma cell between each of the first wall, the second wall, the third wall, and the fourth wall, and
- wherein the plurality of plasma cells are stacked in a configuration such that all third walls are on a same side of the stacked plasma cells facing all fourth walls on an opposite side of the stacked plasma cells.
Dependencies are inferred from the claim text.