Apparatuses comprising transistors including extension regions

An apparatus, comprising:

• first extension regions within semiconductive material;
• second extension regions vertically overlying the first extension regions and extending beyond upper surfaces of the semiconductive material;
• source/drain regions within the second extension regions, the source/drain regions comprising a different material composition than the second extension regions;
• contacts coupled to the source/drain regions;
• and
• gate stacks of transistors vertically overlying the semiconductive material and horizontally adjacent to the second extension regions, upper boundaries of the gate stacks vertically recessed relative to lower boundaries of the source/drain regions.

An apparatus, comprising:

• semiconductive material comprising a first conductivity type;
• transistors adjacent to the semiconductive material and comprising extension regions within the semiconductive material, the extension regions comprising a second conductivity type, differing from the first conductivity type;
• source/drain regions comprising the second conductivity type vertically overlying and spaced from the semiconductive material, the source/drain regions in communication with the extension regions;
• and
• contact structures adjacent to the source/drain regions, a width of the contact structures relatively less than an additional width of the source/drain regions in at least one horizontal direction.