Synaptic device, neuromorphic device including synaptic device, and operating methods thereof

Abstract

A synaptic device, a neuromorphic device including the synaptic device, and operating methods thereof are disclosed. A synaptic device may comprise a channel, a charge trap layer directly contacting the channel, a blocking insulating layer disposed on the charge trap layer, a control electrode disposed on the blocking insulating layer, a first terminal connected to a first region of the channel, and a second terminal connected to a second region of the channel. The synaptic device may change a post-synaptic current (PSC) and control synaptic plasticity according to a control signal applied to the control electrode. The synaptic device may have a SONS (doped poly-silicon/blocking oxide/charge trap nitride/silicon channel) structure. The synaptic device may have SADP characteristics, SDDP characteristics, SFDP characteristics, SNDP characteristics, and STDP characteristics.

Dependencies are inferred from the claim text.