Etching method for fabricating semiconductor device structure
AssigneeNanya Technology Corporation
InventorTZU-CHING TSAI
Life of this patent
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Abstract
An etching method includes executing a first etching recipe on a first wafer to turn a first wafer state of the first wafer to a second wafer state; collecting the second wafer state of the first wafer to generate a first set of data; and analyzing the first set of data and update the first etching recipe to a second etching recipe when the first set of data is not within a predetermined range. The second etching recipe is generated taking into consideration at least one of an etching rate of the second wafer, a rate of rotation of the second wafer, a tilt angle of the second wafer, an implanting recipe of the first wafer, and a deposition recipe of the first wafer. The second etching recipe is configured to be applied on a second wafer to be processed after the first wafer.
Claims8
An etching method for fabricating a semiconductor device structure, comprising:
- executing a first etching recipe on a first wafer to turn a first wafer state of the first wafer to a second wafer state;
- collecting the second wafer state of the first wafer to generate a first set of data;
- and
- analyzing the first set of data and update the first etching recipe to a second etching recipe when the first set of data is not within a predetermined range;
- wherein the second etching recipe is generated taking into consideration at least one of an etching rate of the second wafer, a rate of rotation of the second wafer, a tilt angle of the second wafer, an implanting recipe of the first wafer, and a deposition recipe of the first wafer;
- and
- wherein the second etching recipe is configured to be applied on a second wafer to be processed after the first wafer.
Dependencies are inferred from the claim text.