Method of manufacturing photo masks and semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Hao CHENG, Chun Wei HSU
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Abstract
In a method of manufacturing a photo mask, an original pattern layout including a plurality of patterns, each of which is defined by an opaque area, is obtained, a lower bound of an image-log-slope (ILS) is determined, sizes of the plurality of patterns are adjusted such that an exposure dose for the plurality of patterns decreases, while ILS values of the plurality of patterns do not fall below the lower bound of the ILS, an optical proximity correction (OPC) operation is performed on the plurality of patterns of which sizes have been adjusted to obtain mask data, and a photo mask is manufactured by using the mask data.
Claims20
A method of manufacturing a photo mask, comprising:
- acquiring an original pattern layout including a plurality of patterns, each of which is defined by an opaque area;
- determining a lower bound of an image log slope (ILS);
- adjusting sizes of the plurality of patterns such that an exposure dose for the plurality of patterns decreases, while ILS values of the plurality of pattern do not fall below the lower bound of the ILS;
- performing an optical proximity correction (OPC) operation on the plurality of patterns of which sizes have been adjusted to obtain mask data;
- and
- manufacturing a photo mask by using the mask data.
A method of manufacturing a photo mask, comprising:
- acquiring an original pattern layout including a plurality of patterns, each of which is defined by an opaque area;
- determining a lower bound of an image log slope (ILS);
- performing an optical proximity correction (OPC) operation on the plurality of patterns to obtain mask data such that an exposure dose for the plurality of patterns decreases, while ILS values of the plurality of pattern do not fall below the lower bound of the ILS;
- and
- manufacturing a photo mask by using the mask data.
A method of manufacturing a photo mask, comprising:
- acquiring an original pattern layout including a plurality of patterns, each of which is defined by an opaque area;
- classifying the plurality of patterns into a plurality of groups based on at least one of a size or a shape;
- determining a lower bound of an image log slope (ILS) for each of the plurality of groups;
- performing an optical proximity correction (OPC) operation on the plurality of patterns to obtain mask data such that an exposure dose for the plurality of patterns decreases, while ILS values for the plurality of groups do not fall below the lower bound of the ILS;
- and
- manufacturing a photo mask by using the mask data.
Dependencies are inferred from the claim text.