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US 2023/0418150 A1Published application
Blank mask and photomask using the same
AssigneeSK enpulse Co., Ltd.
InventorsGeonGon LEE, Hyung-joo LEE, Suhyeon KIM, Sung Hoon SON, Seong Yoon KIM, Min Gyo JEONG, Taewan KIM, Inkyun SHIN, Tae Young KIM
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Abstract
A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
Claims12
A blank mask comprising:
- a light transmissive substrate;
- and
- a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen,
- wherein an average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
1 more element
A photomask comprising:
- a light transmissive substrate;
- and
- a light-blocking pattern layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen,
- wherein an average value of grain sizes of a surface of the light-blocking pattern layer ranges from 14 nm to 24 nm.
1 more element
A method of manufacturing a semiconductor device, comprising:
- selectively exposing light incident from a light source through a photomask to a semiconductor wafer on which a resist layer is deposited;
- and
- developing a pattern on the semiconductor wafer,
- wherein the photomask includes a light transmissive substrate and a light-blocking pattern layer disposed on the light transmissive substrate,
- the light-blocking pattern layer includes a transition metal and either one or both of oxygen and nitrogen, and
- an average value of grain sizes of a surface of the light-blocking pattern layer ranges from 14 nm to 24 nm.
3 more elements
Dependencies are inferred from the claim text.