Optical multi-die interconnect bridge with optical interface
AssigneeCelestial AI Inc.
InventorsPhilip WINTERBOTTOM, David LAZOVSKY, Ankur AGGARWAL, Martinus BOS, Subal SAHNI
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AssigneeCelestial AI Inc.
InventorsPhilip WINTERBOTTOM, David LAZOVSKY, Ankur AGGARWAL, Martinus BOS, Subal SAHNI
Estimating the term…
A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.
A package comprising:
The package of claim 0, wherein the OI is offset on a top surface in at least one dimension from the first or the second interconnect regions.
The package of claim 0, wherein the second portion of the photonic transceiver includes a first driver.
The package of claim 0, wherein the second portion of the photonic transceiver includes a first transimpedance amplifier (TIA).
The package of claim 0, wherein the OI includes an optical modulator coupled with the first photonic path and/or a photodetector coupled with the second photonic path.
The package of claim 0, wherein the optical modulator is an electro-absorption modulator fabricated with a material selected from the group consisting of germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), and a III-V material based on gallium arsenide (GaAs).
The package of claim 0, wherein the EIC is a component of a first die coupled with the first interconnect region, the EIC including a central region, wherein the second portion is in or within two (2) millimeters of the central region.
The package of claim 0, further comprising a substrate coupled to the bridging element wherein the bridging element is embedded within the substrate so that a top surface of the bridging element is substantially co-planar with a top surface of the substrate.
The package of claim 0, wherein the first interconnect region extends to a top surface for an abutted coupling of the first portion with the second portion on a bottom surface of the first die.
Dependencies are inferred from the claim text.