Photonic Package and Method of Manufacture

A method comprising:

• forming a silicon waveguide over a top surface of an oxide layer, wherein the oxide layer is over a top surface of a substrate;
• forming a photonic device over the top surface of the oxide layer, wherein the photonic device is optically coupled to the silicon waveguide;
• forming a redistribution structure over the silicon waveguide and the photonic device, wherein the redistribution structure is electrically connected to the photonic device;
• bonding a semiconductor die to the redistribution structure, wherein the semiconductor die is electrically connected to the redistribution structure;
• removing the substrate to expose a bottom surface of the oxide layer;
• forming a first silicon nitride waveguide over the bottom surface of the oxide layer, wherein the first silicon nitride waveguide is optically coupled to the silicon waveguide;
• forming a dielectric layer over the first silicon nitride waveguide and over the bottom surface of the oxide layer;
• directly bonding a laser diode to the dielectric layer, wherein the laser diode is optically coupled to the first silicon nitride waveguide;
• and
• forming vias over the bottom surface of the oxide layer, wherein the vias are electrically connected to the laser diode and the redistribution structure.

A package comprising:

• a laser diode comprising a bonding layer;
• a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode;
• a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode;
• a second dielectric layer over the first silicon nitride waveguide;
• a silicon waveguide in the second dielectric layer;
• an interconnect structure over the silicon waveguide;
• and
• conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.