Gas analysis device and gas analysis method
AssigneesHORIBA STEC, Co., Ltd., Horiba, Ltd.
InventorsYuhei SAKAGUCHI, Masakazu MINAMI, Kyoji SHIBUYA, Motonobu TAKAHASHI
Life of this patent
Estimating the term…
Loading patent…
AssigneesHORIBA STEC, Co., Ltd., Horiba, Ltd.
InventorsYuhei SAKAGUCHI, Masakazu MINAMI, Kyoji SHIBUYA, Motonobu TAKAHASHI
Estimating the term…
The present invention is a gas analysis device that measures a concentration or partial pressure of a halide contained in a material gas used in semiconductor manufacturing process or a by-product gas generated in semiconductor manufacturing process with good accuracy, the device being for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the device including a gas cell into which the material gas or the by-product gas is introduced, a laser light source that irradiates the gas cell with laser light whose wavelength is modulated, a light detector that detects the laser light transmitted through the gas cell, and a signal processing unit that calculates the concentration or partial pressure of the halide by using a light absorption signal obtained from an output signal of the light detector.
A gas analysis device for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the gas analysis device comprising:
A gas analysis method for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the gas analysis method comprising:
Dependencies are inferred from the claim text.